Development & Fabrication of GaAs Diode Lasers
We develop and fabricate tailored gallium arsenide-based diode laser chips in the wavelength range from 0.62 µm to 1.2 µm. This includes chip design, where we use state-of-the-art simulation
Gallium arsenide
OverviewHistoryPreparation and chemistryElectronicsOther applicationsSafetySee alsoExternal links
Gallium arsenide (GaAs) is a III-V direct band gap semiconductor with a zinc blende crystal structure. Gallium arsenide is used in the manufacture of devices such as microwave frequency integrated circuits, monolithic microwave integrated circuits, infrared light-emitting diodes, laser diodes, solar cells and optical windows.
Gallium Arsenide Photonic Integrated Circuit Platform for Tunable
Abstract—An active-passive integration technique for operation near a wavelength of 1030 nm has been developed on a gallium ar-senide (GaAs) photonic integrated circuit platform.
Toward Complex GaAs PIC-Based Laser Sources
Abstract: Diode lasers (DLs) based on gallium arsenide (GaAs) enable direct emission from 630 nm up to 1180 nm , a wavelength range that is of interest for a wide range of applications in metrology,
Related Video Reference
This video was associated with the source search result. Verify technical details against current product documentation and project requirements.
This reference is intended for preliminary specialty-cable research. Compatibility, link budgets, fire performance, installation methods, test limits and applicable standards must be verified for the specific project.